Title :
Fabrication of polysilicon gate FET in laser melted silicon on silicon dioxide on PLZT
Author :
Burgener, M.L. ; Lin, T.H.
Author_Institution :
Naval Ocean Systems Center, San Diego, USA
Abstract :
N-channel polysilicon-gate FETs have been fabricated in a laser-melted silicon-on-SiO2-on-PLZT structure. Channel mobilities in the devices are 50cm2/Vs with threshold and source-to-drain breakdown voltages as expected from the dielectric thickness and channel doping used. PLZT wafers subjected to the same processing temperatures still show an excellent electro-optic effect.
Keywords :
electro-optical effects; elemental semiconductors; ferroelectric materials; insulated gate field effect transistors; lanthanum compounds; laser beam applications; lead compounds; semiconductor technology; silicon; silicon compounds; MOSFET; PLZT; PbLaZrO3TiO3; Si-SiO2-PLZT; Si-SiO2-PbLaZrO3TiO3; electro-optic effect; fabrication; ferroelectric wafer; laser melted structure; n-channel device; poly-Si gate; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870260
