A high-voltage electrooptic drive amplifier using a power MOSFET pair

Author

Theophanous, Nikiforos ; Tsitomeneas, Stefanos ; Alexakis, Giorgos ; Arapoyianni, Angeliki

Author_Institution

Dept. of Phys., Athens Univ., Greece

Volume

37

Issue

1

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

49

Lastpage

52

Abstract

A transformless high-voltage low-current push-pull amplifier using a DMOS (TMOS) power FET pair and capable of driving usual electrooptic (EO) loads with good linearity and sufficient bandwidth is presented. The implemented system provides a low-offset floating output up to 780 V point-to-point (p-p) maximum amplitude (1% distortion limit) for a differential input up to 7.0 V p-p. The maximum, open-circuit gain-bandwidth product for the stage exceeds 1.5 GHz, and its bandwidth decreases from 3.2 MHz to 200 KHz when the load capacitance C _L increases throughput the range of usual EO loads (4-100 pF). The noise contamination is sufficiently low, the maximum output SNR (signal-to-noise ratio) exceeding 70 dB

Keywords

differential amplifiers; electro-optical devices; field effect transistor circuits; insulated gate field effect transistors; power supplies to apparatus; power transistors; 1.5 GHz; 3.2 MHz to 200 kHz; 4 to 100 pF; 7.0 V; 780 V; DMOS; TMOS; differential amplifier; high-voltage electrooptic drive amplifier; high-voltage low-current push-pull amplifier; linearity; low-offset floating output; power MOSFET pair; Bandwidth; Capacitance; Contamination; FETs; High power amplifiers; Linearity; MOSFET circuits; Power MOSFET; Signal to noise ratio; Throughput;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.2662

Filename

2662