Title :
Narrow, high-NA GaAs/GaAlAs optical waveguides with losses below 0.7±0.1 dB cm-1
Author :
Walker, R.G. ; Shephard, H.E. ; Bradley, R.R.
Author_Institution :
Plessey Research (Caswell) Limited, Caswell, Towcester, UK
Abstract :
Losses as low 0.65 dB cm-1 (3 ¿m width) and 0.3 dB cm-1 (8 ¿m width) have been measured (¿ = 1.15 ¿m) in high-confinement (NA ¿ 0.45) GaAs/GaAlAs optical waveguides grown by MOCVD. The Fabry¿Perot loss measurement technique used in deduced to be accurate to ±0.1 dB cm-1. These are the lowest losses reported for gudies of high electro-optic merit in III-V materials.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical losses; optical waveguides; semiconductor epitaxial layers; Fabry-Perot loss measurement technique; GaAs-GaAlAs optical waveguides; III-V semiconductor; MOCVD; electro-optic merit; high NA; integrated optics; optical losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870266
