A computer controlled system for transient capacitance measurements of deep levels in semiconductor

Author

Woon, H.S. ; Tan, H.S. ; Ng, S.C.

Author_Institution

Dept. of Phys., Nat. Univ. of Singapore, Kent Ridge, Singapore

Volume

37

Issue

1

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

86

Lastpage

89

Abstract

A computer-controlled system was set up for the measurement of deep levels in semiconductors. It has a custom-designed interface card to establish communications between necessary instruments and a personal computer. The card enables the system to have a maximum sampling rate of 20000 sample/s. Comparisons were made between the present system and those of other workers. The system is very versatile as its function is solely determined by software programs; different techniques like DLTS (deep-level transient spectroscopy) and TSCAP (thermally stimulated capacitance measurement) can be used on the same setup by developing different programs. The system was applied to the study of deep traps in Si produced as a result of pulsed-laser irradiation. An electron deep trap level of 0.22 eV below the conduction band was found

Keywords

computerised instrumentation; deep level transient spectroscopy; deep levels; elemental semiconductors; microcomputer applications; silicon; thermally stimulated currents; 0.22 eV; DLTS; Si; TSCAP; computer controlled system; computerised instrumentation; custom-designed interface card; deep levels; deep traps; deep-level transient spectroscopy; personal computer; pulsed-laser irradiation; semiconductor; thermally stimulated capacitance measurement; transient capacitance measurements; Application software; Capacitance measurement; Control systems; Electron traps; Energy capture; Energy measurement; Microcomputers; Sampling methods; Spectroscopy; Temperature;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.2670

Filename

2670