Title :
Low-threshold, high-power zero-order lateral-mode DQW-SCH metal-clad ridge waveguide (AlGa)As/GaAs lasers
Author :
Garrett, B. ; Glew, R.W.
Author_Institution :
STC Technology Ltd, Harlow, UK
Abstract :
Metal-clad ridge waveguide (MCRW), double quantum well, separately confined heterostrucuture (DQW-SCH) lasers have been fabricated having continuous-wave (CW) threshold currents of 10¿12 mA and external differential quantum efficiencies of 41¿46% per uncoated facet. Light/current characteristics are linear to >70 mW, and zero-order lateral mode operation was measured at 56 mW. The CW burn-off power density is nearly double the best previously reported value.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical waveguides; semiconductor junction lasers; 10 to 12 mA; 41 to 46 percent; AlGaAs-GaAs metal clad ridge waveguide lasers; CW burn-off power density; CW threshold currents; DQW-SCH lasers; external differential quantum efficiencies; light current characteristics; semiconductor laser; zero-order lateral mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870272
