• DocumentCode
    1031597
  • Title

    Gigabit optical transmitter GaAs MESFET IC

  • Author

    Utsumi ; Tezuka, A. ; Nishii, Kento ; Bando, Kazuki ; Inoue, Ken ; Onuma, T.

  • Author_Institution
    Matsushita Electric Industrial Co. Ltd., Semiconductor Research Centre, Moriguchi, Japan
  • Volume
    23
  • Issue
    8
  • fYear
    1987
  • Firstpage
    374
  • Lastpage
    376
  • Abstract
    A GaAs optical transmitter IC consisting of input buffers, a D-type flip-flop, an NRZ/RZ code convertor and a light source current driver has been developed for use in fibre-optic communication systems, employing D-MESFET SCFL by the Pt buried gate FET process. 1.1 Gbit/s modulation of an LD in RZ format with 20 mA peak drive current has been demonstrated.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; 1.1 Gbit/s; 20 mA; D-MESFET SCFL; D-type flip-flop; GaAs; MESFET IC; NRZ/RZ code convertor; fibre-optic communication systems; input buffers; light source current driver; optical transmitter IC; peak drive current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870274
  • Filename
    4257603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031597