DocumentCode
1031639
Title
Heterostructure complementary technology
Author
Simmons, Jay G. ; Taylor, Graham W.
Author_Institution
University of Bradford, Microelectronics & CADMAT Centre, Bradford, UK
Volume
23
Issue
8
fYear
1987
Firstpage
380
Lastpage
382
Abstract
A complementary inverter configuration based on two new heterostructure field-effect devices is proposed. The FETs are fabricated in a common substrate grown by molecular-beam epitaxy. The devices rely on the formation of inversion layers at heterojunction interfaces.
Keywords
field effect integrated circuits; high electron mobility transistors; invertors; junction gate field effect transistors; GaAs-AlGaAs; complementary inverter configuration; heterojunction interfaces; heterostructure FET; heterostructure JFET; heterostructure field-effect devices; inversion layers; molecular-beam epitaxy;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870278
Filename
4257607
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