• DocumentCode
    1031654
  • Title

    New CMOS compatible junction-isolated lateral base resistance controlled thyristor

  • Author

    Amaratunga, G.A.J.

  • Volume
    30
  • Issue
    3
  • fYear
    1994
  • fDate
    2/3/1994 12:00:00 AM
  • Firstpage
    271
  • Lastpage
    272
  • Abstract
    A new 550 V lateral base resistance controlled thyristor structure is proposed and its operation is rigorously characterised by two-dimensional numerical simulation in the off-state, on-state, and turn-off transient mode. Simulations indicate a 40% lower forward voltage drop over a comparable LIGBT, and a superior switching property over other competing lateral thyristor structures
  • Keywords
    CMOS integrated circuits; semiconductor device models; thyristors; 550 V; CMOS compatible thyristor; LIGBT; junction-isolated lateral base resistance controlled thyristor; lateral thyristor structures; off-state; on-state; switching property; turn-off transient mode; two-dimensional numerical simulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940130
  • Filename
    267196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031654