Abstract :
A new 550 V lateral base resistance controlled thyristor structure is proposed and its operation is rigorously characterised by two-dimensional numerical simulation in the off-state, on-state, and turn-off transient mode. Simulations indicate a 40% lower forward voltage drop over a comparable LIGBT, and a superior switching property over other competing lateral thyristor structures
Keywords :
CMOS integrated circuits; semiconductor device models; thyristors; 550 V; CMOS compatible thyristor; LIGBT; junction-isolated lateral base resistance controlled thyristor; lateral thyristor structures; off-state; on-state; switching property; turn-off transient mode; two-dimensional numerical simulation;
