• DocumentCode
    1031675
  • Title

    Transverse junction buried heterostructure (TJ-BH) AlGaAs diode laser

  • Author

    Suzuki, Yuya ; Mukai, Sonoyo ; Yajima, Hiroya ; Sato, Takao

  • Author_Institution
    Electrotechnical Laboratory, Radio- and Opto-Electronics Division, Tsukuba, Japan
  • Volume
    23
  • Issue
    8
  • fYear
    1987
  • Firstpage
    384
  • Lastpage
    385
  • Abstract
    A successful demonstration of a transverse junction buried heterostructure AlGaAs diode laser is described. A typical threshold current of 40mA and a typical differential efficiency of 50% is obtained for the 1.5¿m-wide active region and the 250¿m-long diode.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 40 mA; 50 percent; differential efficiency; semiconductor laser; threshold current; transverse junction buried heterostructure AlGaAs diode laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870281
  • Filename
    4257610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031675