11 GHz ultrawide-bandwidth monolithic photoreceiver using InGaAs pin PD and InAlAs/InGaAs HEMTs

Author

Akahori, Y. ; Ikeda, Makoto ; Kohzen, A. ; Akatsu, Y.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa

Volume

30

Issue

3

fYear

1994

fDate

2/3/1994 12:00:00 AM

Firstpage

267

Lastpage

268

Abstract

A very-wide-bandwidth long-wavelength monolithically integrated photoreceiver is presented which comprises an InGaAs pin PD and a transimpedance amplifier. The receiver uses epilayers grown by one-step MOVPE. The InGaAs channel high-electron-mobility field effect transistor (HEMT) employs an Si planar-doped carrier supplying layer to obtain larger transconductance and uniform threshold voltage. The 0.5 μm gate length is used for HEMTs to enhance the speed of operation. This receiver shows a very wide bandwidth of 11 GHz, and opened eye for a 15 Gbit/s NRZ signal. This is the first demonstration of a long-wavelength monolithic photoreceiver receiving a 15 Gbit/s light signal

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 0.5 mum; 11 GHz; 15 Gbit/s; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InGaAs pin photodiode; Si planar-doped carrier; gate length; high-electron-mobility field effect transistor; transconductance; ultrawide-bandwidth monolithic photoreceiver; uniform threshold voltage;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940147

Filename

267199