Title :
1.3 μm InGaAsP half duplex transceivers fabricated using a novel chromium doped semi-insulating blocking structure
Author :
Lealman, I.F. ; Rivers, Lelsey J ; Smith, Peter J.
Author_Institution :
British Telecom Res. Labs., Ipswich
fDate :
2/3/1994 12:00:00 AM
Abstract :
The fabrication of 1.3 μm wavelength half-duplex transceivers using a novel low-capacitance chromium doped InP semi-insulating blocking layer is reported. The devices offer improved CW performance over conventional iron doped devices. A capacitance of 0.6 pF at -1 V bias and a responsivity of 0.4 A/W were obtained
Keywords :
III-V semiconductors; chromium; gallium arsenide; indium compounds; optical receivers; semiconductor lasers; semiconductor technology; transceivers; -1 V; 0.6 pF; 1.3 mum; CW performance; InGaAsP; InGaAsP half duplex transceivers; InP:Cr; InP:Cr semi-insulating blocking layer; fabrication; semi-insulating blocking structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940186
