Title :
An accurate numerical one-dimensional solution of the p-n junction under arbitrary transient conditions
fDate :
6/1/1968 12:00:00 AM
Keywords :
Current density; Cutoff frequency; Doping profiles; Electron devices; Equations; Iterative methods; P-n junctions; Radiative recombination; Silicon; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16295
