DocumentCode

1031721

Title

An accurate numerical one-dimensional solution of the p-n junction under arbitrary transient conditions

Author

De Mari, A.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

426

Lastpage

426

Keywords

Current density; Cutoff frequency; Doping profiles; Electron devices; Equations; Iterative methods; P-n junctions; Radiative recombination; Silicon; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16295

Filename

1475197