Title :
Surface recombination in semiconductors
Author :
Fitzgerald, D.J. ; Grove, A.S.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Etching; Frequency; Germanium; Impurities; Interface states; Radiative recombination; Semiconductor device noise; Silicon; Spontaneous emission; Surface treatment;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16296
