DocumentCode :
1031735
Title :
Perpendicular magnetic anisotropy on sputtered FeTi films
Author :
Tamai, Hideki ; Tagami, Katsumichi
Author_Institution :
Microelectronics Research Labs., NEC Corporation, Kawasaki, Japan
Volume :
23
Issue :
5
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
2737
Lastpage :
2739
Abstract :
Magnetic properties and crystalline structures for sputtered FeTi films (0-40 at% Ti in composition), have been examined. The film structures were divided into three regions, bcc phase, transition region from bee to amorphous phase, and amorphous phase. In the transition region (15-18 at% Ti) from bcc to amorphous phase, FeTi films with perpendicular magnetic anisotropy were found. Saturation magnetization, magnetic anisotropy field, and perpendicular coercivity for a typical FeTi film (16.8 at% Ti) prepared in the transition region were 300 emu/cc, 2.7 kOe, and 710 Oe, respectively. Crystalline microstructures for FeTi films with perpendicular magnetic anisotropy are composed of amorphous phase and isolated pillar or pin-like crystalline grains (200-500 Å) with bcc phase surrounded by the amorphous phase. Therefore, the origin of perpendicular magnetic anisotropy on FeTi films is mainly attributed to the grains shape anisotropy.
Keywords :
Magnetic films/devices; Perpendicular magnetic anisotropy; Amorphous materials; Coercive force; Crystal microstructure; Crystallization; Magnetic anisotropy; Magnetic films; Magnetic properties; Perpendicular magnetic anisotropy; Saturation magnetization; Shape;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065709
Filename :
1065709
Link To Document :
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