• DocumentCode
    1031749
  • Title

    MBE-grown AlGaAs/GaAs HBTs on InP substrate

  • Author

    Ito, H. ; Ishibashi, Takayuki

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi, Japan
  • Volume
    23
  • Issue
    8
  • fYear
    1987
  • Firstpage
    394
  • Lastpage
    395
  • Abstract
    AlGaAs/GaAs HBTs are fabricated on InP substrates for the first time. Preliminary results show a current gain of 5 at a collector current density of 2 × 104A/cm2 in spite of a dislocation density higher than 109/cm2.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; AlGaAs-GaAs bipolar transistors; HBTs; InP substrates; MBE growth; collector current density; current gain; dislocation density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870288
  • Filename
    4257617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031749