DocumentCode

1031788

Title

A quantitative theory of 1/f-type noise due to interface states in thermally oxidized silicon

Author

Nicollian, E.H. ; Melchior, H.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

427

Lastpage

427

Keywords

Copper; Dispersion; Frequency dependence; Frequency measurement; Interface states; Noise measurement; Silicon; Telephony; Time measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16302

Filename

1475204