Title :
A quantitative theory of 1/f-type noise due to interface states in thermally oxidized silicon
Author :
Nicollian, E.H. ; Melchior, H.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Copper; Dispersion; Frequency dependence; Frequency measurement; Interface states; Noise measurement; Silicon; Telephony; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16302
