DocumentCode
1031837
Title
9.5-14.5 GHz GaAs HBT 1W MMIC with 55% peak power added efficiency
Author
Ali, Farahiyah ; Gupta, Arpan ; Salib, M.
Author_Institution
Adv. Technol. Div., Westinghouse Electr. Corp., Baltimore, MD
Volume
30
Issue
3
fYear
1994
fDate
2/3/1994 12:00:00 AM
Firstpage
245
Lastpage
246
Abstract
A fully matched, broadband, high efficiency MMIC power amplifier using AlGaAs/GaAs HBTs has been designed and tested. At 7 V collector bias, this HBT amplifier produced 31 dBm CW peak output power with 9 dB gain and 55% peak power-added efficiency in the 9.5-14.5 GHz band. To the authors´ knowledge, this is the highest efficiency ever achieved from a broadband MMIC power amplifier
Keywords
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; wideband amplifiers; 1 W; 55 percent; 7 V; 9 dB; 9.5 to 14.5 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBTs; CW peak output power; HBT amplifier; MMIC; broadband amplifier; collector bias; microwave amplifiers; peak power added efficiency; power amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940172
Filename
267213
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