Title :
9.5-14.5 GHz GaAs HBT 1W MMIC with 55% peak power added efficiency
Author :
Ali, Farahiyah ; Gupta, Arpan ; Salib, M.
Author_Institution :
Adv. Technol. Div., Westinghouse Electr. Corp., Baltimore, MD
fDate :
2/3/1994 12:00:00 AM
Abstract :
A fully matched, broadband, high efficiency MMIC power amplifier using AlGaAs/GaAs HBTs has been designed and tested. At 7 V collector bias, this HBT amplifier produced 31 dBm CW peak output power with 9 dB gain and 55% peak power-added efficiency in the 9.5-14.5 GHz band. To the authors´ knowledge, this is the highest efficiency ever achieved from a broadband MMIC power amplifier
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; wideband amplifiers; 1 W; 55 percent; 7 V; 9 dB; 9.5 to 14.5 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBTs; CW peak output power; HBT amplifier; MMIC; broadband amplifier; collector bias; microwave amplifiers; peak power added efficiency; power amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940172
