DocumentCode
1031847
Title
1.1 GHz oscillator using bondwire inductance
Author
Steyaert, M. ; Craninckx, J.
Author_Institution
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
Volume
30
Issue
3
fYear
1994
fDate
2/3/1994 12:00:00 AM
Firstpage
244
Lastpage
245
Abstract
Using the parasitic inductance usually associated with a bondwire in an IC package, a bipolar GHz LC-tuned oscillator is designed. Bondwires have very low series resistance and are thus suitable for high-Q applications. Measured results indicate very low phase noise and low power consumption
Keywords
MMIC; bipolar integrated circuits; inductance; microwave oscillators; semiconductor device noise; tuning; variable-frequency oscillators; 1.1 GHz; IC package; Si; UHF; bipolar GHz LC-tuned oscillator; bondwire inductance; high-Q applications; low phase noise; low power consumption; oscillator; parasitic inductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940159
Filename
267214
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