Title :
Very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers
Author :
Yamamoto, Naoji ; Yokoyama, Kazuya ; Yamanaka, T. ; Yamamoto, Manabu
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
2/3/1994 12:00:00 AM
Abstract :
A low threshold current density of ~100 A/cm2 has been obtained at 1.55 μm using a graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well laser. The design of the laser structure is based on results calculated from the viewpoint of effective carrier injection into the well
Keywords :
III-V semiconductors; current density; gallium arsenide; gradient index optics; indium compounds; semiconductor lasers; 1.55 micron; GRINSCH; InGaAsP; design; effective carrier injection; laser structure; low threshold current density; very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940137
