• DocumentCode
    1031908
  • Title

    Analysis of threshold current density in 2.2 μm GaInAsSb/GaAlAsSb/GaSb DH lasers

  • Author

    Brosson, P. ; Benoit, J. ; Joullie, A. ; Sermage, B.

  • Author_Institution
    CR-CGE, Laboratoires de Marcoussis, Marcoussis, France
  • Volume
    23
  • Issue
    8
  • fYear
    1987
  • Firstpage
    417
  • Lastpage
    419
  • Abstract
    From comparison of published experimental data with a theoretical model of GaInAsSb/GaAlAsSb/GaSb DH lasers emitting at 2.2 μm, the Auger coefficient of the active material has been determined to be C ≅ 1028cm6S-1. A threshold current density as low as 2 kA/cm2 is expected at 300 K for such a DH with a 0.3 μm-thick active layer and confinement layers with a high aluminium content (x = 0.6).
  • Keywords
    Auger effect; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; semiconductor junction lasers; 2.2 micron; Auger coefficient; DH lasers; GaInAsSb-GaAlAsSb-GaSb; III-V semiconductors; active material; confinement layers; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870303
  • Filename
    4257632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031908