Title :
Reduced threshold vertical-cavity surface-emitting lasers
Author :
Young, D.B. ; Kapila, A. ; Scott, J.W. ; Malhotra, Vishv ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fDate :
2/3/1994 12:00:00 AM
Abstract :
Etched-pillar vertical-cavity surface-emitting laser structures have been fabricated incorporating sidewall sulphide passivation to reduce the surface recombination velocity at the exposed quantum well edges. The passivated devices exhibit a 25% reduction in surface recombination velocity and a minimum 0.67 mA threshold current
Keywords :
laser cavity resonators; optical workshop techniques; passivation; semiconductor lasers; 0.67 mA; InGaAs; VCSEL; etched-pillar vertical-cavity surface-emitting laser structures; quantum well edges; reduced threshold vertical-cavity surface-emitting lasers; sidewall sulphide passivation; surface recombination velocity; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940141
