Title :
Polarisation insensitive photodetector characteristics of a tensile strained barrier laser diode
Author :
Suzuki, Yuya ; Kurosaki, T. ; Tohmori, Y. ; Fukuda, Motohisa
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
2/3/1994 12:00:00 AM
Abstract :
A novel approach for realising polarisation insensitive photodetectors in a laser diode is proposed and demonstrated using a tensile strained barrier multiquantum well active layer. The polarisation dependency of the sensitivity is suppressed by 0.5 dB. A flat response is obtained in the 1.5 μm wavelength region from 1.48 to 1.58 μm
Keywords :
infrared detectors; integrated optics; light polarisation; photodetectors; semiconductor lasers; 1.48 to 1.58 micron; flat response; photonic integrated circuits; polarisation dependency; polarisation insensitive photodetectors; tensile strained barrier laser diode; tensile strained barrier multiquantum well active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940192
