DocumentCode
1031999
Title
Fabrication of resonant-tunnelling optical bistable laser diode
Author
Kawamura, Yuriko ; Asai, Hiroki ; Iwamura, Hideyuki
Author_Institution
NTT Opto-Electron. Labs., Kanagawa
Volume
30
Issue
3
fYear
1994
fDate
2/3/1994 12:00:00 AM
Firstpage
225
Lastpage
227
Abstract
A resonant-tunnelling optical bistable laser is fabricated by monolithically integrating an InGaAs/InAlAs MQW laser diode and an InGaAs/AlAsSb resonant-tunnelling phototransistor. Inverter type light-input/light-output optical bistable operation is achieved with this bistable laser
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; optical bistability; phototransistors; resonant tunnelling devices; semiconductor lasers; InGaAs-AlAsSb; InGaAs-InAlAs; InGaAs/AlAsSb resonant-tunnelling phototransistor; InGaAs/InAlAs MQW laser diode; fabrication; inverter type light-input/light-output optical bistable operation; monolithic integration; resonant-tunnelling optical bistable laser diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940126
Filename
267225
Link To Document