Title :
Effect of Coulomb interaction on calculated interband gain in ZnSe
Author_Institution :
Dept. of Phys. & Astron., St. Andrews Univ.
fDate :
2/3/1994 12:00:00 AM
Abstract :
The optical gain for band-to-band transitions at room temperature in ZnSe and GaAs has been calculated with and without electron-hole Coulomb interaction. The Coulomb enhancement of maximum gain is substantial for ZnSe: the nominal current density at threshold is also increased
Keywords :
II-VI semiconductors; band structure of crystalline semiconductors and insulators; current density; excitons; laser theory; semiconductor lasers; zinc compounds; Coulomb enhancement; Coulomb interaction; GaAs; ZnSe; band-to-band transitions; current density; electron-hole Coulomb interaction; excitonic enhancement; interband gain; optical gain; room temperature; threshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940152
