Narrow FMR linewidth dependence on growth conditions in LPE YIG films

Growth process of single crystal YIG and YIG : La films with narrow FMR linewidth Δ H is reported from the isothermal dipping method of liquid phase epitaxy. The growth conditions have been investigated, not to obtain the lowest Δ H value on a few samples, but to produce in routine regime narrow linewidth garnet films in the 0.3-0.5 Oe range independent of the film thickness. The ΔH value measured at 9.3 GHz corresponds for a given film to the mean value of linewidth deduced from six or more 3 × 3 mm²samples cut from the full wafer.