Title :
Dual-gate silicon permeable-base transistors built on LPVPE-grown material
Author :
Gruhle, A. ; Vescan, L. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Permeable-base transistors have been fabricated on epitaxial silicon layers grown by low-pressure vapour-phase epitaxy. Reactive ion etching is used to form the grooved-etched transistors with 0.5-2 ¿m-wide channels. The emitter geometry permits self-aligned formation of two separate base electrodes which can be useful in mixer applications. Measured gm values of 62 mS/mm are the highest yet reported for Si PBTs.
Keywords :
bipolar transistors; elemental semiconductors; semiconductor technology; silicon; sputter etching; vapour phase epitaxial growth; 0.5 to 2 micron; LPVPE-grown material; RIE; Si PBT; Si transistors; dual-gate PBT; emitter geometry; grooved-etched transistors; mixer applications; self-aligned formation; semiconductors; two separate base electrodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870322
