A new junction design for ion-implanted and permalloy hybrid bubble memory devices

A new junction for the swap-gate side using the corner-Permalloy pattern in hybrid bubble memory devices has been designed and characterized. The design is based on the corner-type junction for the replicate-gate side and the conventional swap gate. The junction where bubbles propagate from the corner-Permalloy pattern or the transfer-in Permalloy pattern to ion-implanted tracks is composed of the ion-implanted cusp and three Permalloy-pattern tips. The junction bias field margin is greater than 10% for the rotating field range of 50 to 60 Oe and the temperature range of 20 to 65°C. The characteristics improvement is realized by the enlarged Permalloy patterns with large curvature.