Title :
ZnSe-Ge heterojunction transistors
Author :
Hovel, H.J. ; Milnes, A.G.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Aerospace materials; Conductivity; Current density; Doping; Electron devices; Geometry; Heterojunctions; Photonic integrated circuits; Substrates; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16339
