Title :
Gate current in 0.75μm N-channel MOSFETs with doubly diffused drain
Author :
Watts, R.K. ; Manchanda, L. ; Johnston, Roy L.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
The MOSFET with doubly diffused drain has been proposed as a solution to the problem of degradation in small MOSFETs. We find good agreement between measured gate current and values calculated assuming that the gate current is due to hot channel electrons thermionically emitted into the gate oxide.
Keywords :
digital simulation; hot carriers; insulated gate field effect transistors; semiconductor device models; 0.75 micron; doubly diffused drain; hot channel electrons; measured gate current; models; n-channel MOSFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870337
