Field-access scheme of bloch line memory

The Bloch line propagation under bias pulsed fields has been studied by using the computer-simulation. Stripe domain walls were stabilized around 100 % grooved regions. A potential well to define the bit position was generated by a stray field from very thin high coercive-force films. The pulsed field amplitude of several Oe and several tens Oe are required for propagating VBL pairs in 5 μm and .5 μm bubble-garnet films, respectively. A larger damping parameter and a smaller gyromagnetic constant than the usual bubble garnet film are desirable for reliable propagation. Magnetic and electric circuits are proposed to supply fast-rise and slow-fall bias pulsed fields.