Title :
Low-noise D-band IMPATT oscillators
Author :
Wenger, Jerome ; Huber, Samuel
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Abstract :
The single-sideband FM noise characteristics of IMPATT diode oscillators for D-band frequencies have been measured by means of a direct-detection system with a high-Q quasi-optical resonator. For an n-type silicon single-drift IMPATT diode a ¿frms of 11 Hz/¿Hz and a noise measure of 37 dB at 137.5 GHz and 26 mW output power was determined.
Keywords :
IMPATT diodes; cavity resonators; electron device noise; microwave oscillators; 137.5 GHz; 26 mW; 37 dB; D-band impatt oscillators; EHF; FM noise; MM-waves; Si diodes; direct-detection system; high-Q quasi-optical resonator; impatt diode oscillators; n-type Si single-drift IMPATT diode; noise measure; output power; single-sideband FM noise characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870342
