Title :
Double-diffused high-speed Ge transistors
fDate :
6/1/1968 12:00:00 AM
Keywords :
Boron; Delay; Ferrites; Insertion loss; Packaging; Plasma applications; Plasma devices; Plasma temperature; Thermal conductivity; Varactors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16364
