Title :
Laser recrystallised SOI with periodical seeding filled by selective epitaxial growth
Author :
Regolini, J.L. ; Dutartre, D. ; Bensahel, D. ; Karapiperis, L. ; Garry, G. ; Dieumegard, D.
Author_Institution :
Centre National d´Etudes des Télécommunications, Meylan, France
Abstract :
A periodic seeding technique for obtaining thin silicon films on an insulator (SOI) by laser recrystallisation is described. Two types of seed structure as well as their orientations relative to the scan direction are discussed. Geometrical parameters are optimised to obtain 35¿m-wide defect-free SOI stripes across 4in (101-6mm) silicon wafers.
Keywords :
elemental semiconductors; laser beam applications; recrystallisation; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; silicon; vapour phase epitaxial growth; zone melting; SOI stripes; Si-SiO2; VPE; laser ZMR; laser recrystallisation; periodic seeding technique; scan direction; seed structure; selective epitaxial growth; semiconductor insulator boundary;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870358
