Monolithic integrated waveguide photodetector

Author

Chandrasekhar, S. ; Campbell, J.C. ; Dentai, A.G. ; Qua, G.J.

Author_Institution

AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA

Volume

23

Issue

10

fYear

1987

Firstpage

501

Lastpage

502

Abstract

An InGaAs photodetector for detection in the 1.0Â¿1.5Â¿m wavelength range has been integrated at the end of and above a ridge waveguide in InP. The waveguides were in nÂ¿-InP/n+-InP and had an average propagation loss of 3dB/cm at 1.15Â¿m. The reflection losses were 3dB and the coupling loss was 2dB. The photodetector was an InGaAs photoconductor lattice-matched to InP and exhibited a bias-dependent optical gain of up to 2.5 with a unity-gain quantum efficiency of 49% at 1.15Â¿m. 25% of the guided light was absorbed by the photoconductor. The speed of the photoconductor was found to be bias-dependent, varying from 10 ns to 150 ns rise/fall times.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical losses; optical waveguides; photoconducting devices; photodetectors; 1 to 1.5 micron; 10 to 150 ns; 2 dB; 3 dB; 49 percent; InGaAs photodetector; InP; OEIC; bias-dependent optical gain; coupling loss; fall time; monolithic integrated waveguide photodetector; photoconducting device; propagation loss; reflection losses; ridge waveguide; rise time; unity-gain quantum efficiency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19870363

Filename

4257694