Title :
Monolithic integrated waveguide photodetector
Author :
Chandrasekhar, S. ; Campbell, J.C. ; Dentai, A.G. ; Qua, G.J.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
An InGaAs photodetector for detection in the 1.0¿1.5¿m wavelength range has been integrated at the end of and above a ridge waveguide in InP. The waveguides were in n¿-InP/n+-InP and had an average propagation loss of 3dB/cm at 1.15¿m. The reflection losses were 3dB and the coupling loss was 2dB. The photodetector was an InGaAs photoconductor lattice-matched to InP and exhibited a bias-dependent optical gain of up to 2.5 with a unity-gain quantum efficiency of 49% at 1.15¿m. 25% of the guided light was absorbed by the photoconductor. The speed of the photoconductor was found to be bias-dependent, varying from 10 ns to 150 ns rise/fall times.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical losses; optical waveguides; photoconducting devices; photodetectors; 1 to 1.5 micron; 10 to 150 ns; 2 dB; 3 dB; 49 percent; InGaAs photodetector; InP; OEIC; bias-dependent optical gain; coupling loss; fall time; monolithic integrated waveguide photodetector; photoconducting device; propagation loss; reflection losses; ridge waveguide; rise time; unity-gain quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870363
