Title :
Monolithic integration of a transverse-junction stripe laser and metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate
Author :
Ohta, Jun ; Kuroda, K. ; Mitsunaga, K. ; Kyuma, K. ; Hamanaka, K. ; Nakayama, Taiki
Author_Institution :
Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan
Abstract :
A buried transverse-junction stripe laser diode and two metal-semiconductor field-effect transistors were monolithically integrated using two-step molecular beam epitaxy. This device had an almost flat surface well suited for the integration. High performance and high-speed operation (<1GHz) have been demonstrated in this integrated device for the first time.
Keywords :
Schottky gate field effect transistors; integrated optoelectronics; molecular beam epitaxial growth; semiconductor junction lasers; GaAs substrate; MESFET; OEIC; flat surface well; high-speed operation; monolithic integration; transverse-junction stripe laser; two-step molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870368
