Title :
pMOS dosimeter with two-layer gate oxide operated at zero and negative bias
Author :
Ristic, G. ; Golubovic, S. ; Pejovic, M.
Author_Institution :
Fac. of Electron. Eng., Belgrade Univ.
fDate :
2/17/1994 12:00:00 AM
Abstract :
The linearity of threshold voltage shift, during irradiation of thick gate oxide pMOS transistors, operated at zero and negative bias, is investigated. It is found that the threshold voltage shift is not linear in the `zero bias regime´. The linearity increases with an increase in the absolute value of the negative gate voltage
Keywords :
dosimeters; gamma-ray effects; insulated gate field effect transistors; gamma-ray effects; linearity; negative bias; negative gate voltage; pMOS dosimeter; thick gate oxide pMOS transistors; threshold voltage shift; two-layer gate oxide; zero bias regime;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940196
