Title :
Exciton electroabsorption at room temperature in InGaAs/InP multiquantum-well structures grown by atmospheric-pressure MOCVD
Author :
Moseley, A.J. ; Scott, M.D. ; Williams, P.J. ; Wallis, R.H. ; Davies, J.I. ; Riffat, J.R.
Author_Institution :
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
Sharp excitonic absorption features have been observed in MOCVD-grown InGaAs/InP multiquantum-well structures via a study of the spectral dependence of the photocurrent characteristics of a PIN diode containing the multiquantum wells in the intrinsic region. The first observation of a shift of excitonic peak wavelength with an applied electric field is reported for this material system.
Keywords :
III-V semiconductors; electroabsorption; excitons; gallium arsenide; indium compounds; photoconductivity; semiconductor epitaxial layers; semiconductor superlattices; vapour phase epitaxial growth; III-V semiconductors; InGaAs-InP; MQW structure; PIN diode; VPE; applied electric field; atmospheric-pressure MOCVD; electron energy states; epitaxial growth; exciton electroabsorption; excitonic absorption; excitonic peak wavelength shift; intrinsic region; multiquantum-well structures; p-i-n device; photocurrent characteristics; room temperature; spectral dependence; superlattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870373
