DocumentCode
1032684
Title
Antiguided laser array structure at 1.48 μm fabricated without overgrowth
Author
Laughton, F.R. ; Marsh, John H. ; Button, C.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ.
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
303
Lastpage
305
Abstract
The authors describe the fabrication of five-element antiguided laser arrays at 1.48 μm using a novel material design which removes the need for overgrowth. Adding undoped passive waveguiding layers to the standard laser design significantly alters the shape of the far field emission from the lasers, showing that the array elements are pulled in phase with each other
Keywords
integrated optics; laser transitions; optical waveguides; optical workshop techniques; semiconductor laser arrays; 1.48 micron; InGaAs-InGaAsP-InP; antiguided laser array structure; fabrication; far field emission; five-element array; laser design; undoped passive waveguiding layers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940204
Filename
267295
Link To Document