DocumentCode
1032703
Title
2.4 W CW 770 nm laser arrays with nonabsorbing mirrors
Author
Welch, D.F. ; Streifer, W. ; Thornton, R.L. ; Paoli, T.
Author_Institution
Spectra Diode Laboratories, San Jose, USA
Volume
23
Issue
10
fYear
1987
Firstpage
525
Lastpage
527
Abstract
Laser arrays have been fabricated with silicon-impurityinduced disordered nonabsorbing mirrors (windows) to enhance the maximum CW power output. The power output was thermally limited for a 100 ¿m-aperture device to 2.4 W CW while catastrophic failure occurred under pulsed conditions at 3.5 W in a 100 ¿s pulse and increased to 22 W for a 50 ns pulse. The emission wavelength of these diodes is 770 nm.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser transitions; semiconductor junction lasers; 100 micron; 2.4 to 22 W; 50 ns to 100 mus; 770 nm; CW power output; GaAs-AlGaAs; Si impurity-induced disorder; catastrophic failure; cavity-resonators; continuous wave operation; emission wavelength; laser arrays; nonabsorbing mirrors; pulse length; pulsed conditions; semiconductor diode lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870379
Filename
4257710
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