Title :
Millimeter-wave integrated circuits
Author :
Mao, S. ; Jones, S. ; Vendelin, George D.
Author_Institution :
Texas Instruments Incorporated, Dallas, Tex.
fDate :
7/1/1968 12:00:00 AM
Abstract :
Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHz range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/λ. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.
Keywords :
Ceramics; Circuit testing; Detectors; Diodes; Distributed parameter circuits; Frequency; Gallium arsenide; Microstrip; Millimeter wave integrated circuits; Millimeter wave technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16391