Title :
Examination of intervalence band absorption and its reduction by strain in 1.55 μm compressively strained InGaAs/InP laser diodes
Author_Institution :
Dept. of Phys., Dublin City Univ.
fDate :
2/17/1994 12:00:00 AM
Abstract :
Reduction of intervalence band absorption found in highly strained semiconductor lasers is dominated by enhancement in the TE gain spectrum due to the inclusion of compressive strain in the active layer and not by a change in the S-like character of the spin-orbit band
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor lasers; valence bands; 1.55 micron; InGaAs-InP; InGaAs/InP laser diodes; TE gain spectrum; active layer; compressive strain; compressively strained; highly strained semiconductor lasers; intervalence band absorption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940225
