Title :
110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs
Author :
Parker, D.G. ; Say, P.G. ; Hansom, A.M. ; Sibbett, W.
Author_Institution :
GEC Research Limited, Hirst Research Centre, Wembley, UK
Abstract :
An indium tin oxide/GaAs photodiode is reported with a ¿3 dB bandwidth in excess of 110 GHz. This device exhibits an external quantum efficiency of > 25% (~0.2 A/W). The device is mounted enabling direct measurements of bandwidth to be made using external mixers and a high-frequency spectrum analyser.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; tin compounds; 100 GHz; III-V semiconductors; ITO-GaAs; InSnO-GaAs; high-efficiency; photodiodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870380
