DocumentCode
1032711
Title
110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs
Author
Parker, D.G. ; Say, P.G. ; Hansom, A.M. ; Sibbett, W.
Author_Institution
GEC Research Limited, Hirst Research Centre, Wembley, UK
Volume
23
Issue
10
fYear
1987
Firstpage
527
Lastpage
528
Abstract
An indium tin oxide/GaAs photodiode is reported with a ¿3 dB bandwidth in excess of 110 GHz. This device exhibits an external quantum efficiency of > 25% (~0.2 A/W). The device is mounted enabling direct measurements of bandwidth to be made using external mixers and a high-frequency spectrum analyser.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; tin compounds; 100 GHz; III-V semiconductors; ITO-GaAs; InSnO-GaAs; high-efficiency; photodiodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870380
Filename
4257711
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