• DocumentCode
    1032723
  • Title

    Al0.45Ga0.55As/GaAs HEMTs grown by MOVPE exhibiting high transconductance

  • Author

    Powell, A. ; Mistry, Perhaad ; Roberts, Jeffrey S. ; Rockett, P.I.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    23
  • Issue
    10
  • fYear
    1987
  • Firstpage
    528
  • Lastpage
    529
  • Abstract
    We report results of Al0.45Ga0.55As/GaAs HEMTs grown by atmospheric-pressure MOVPE. The 1 ¿m-gate-length devices exhibited extrinsic room-temperature transconductances as high as 295mS/mm, which we believe to be the best DC performance to date for devices utilising such a high Al mole fraction.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor growth; vapour phase epitaxial growth; 1 micron; 295 ms; Al0.45Ga0.55As-GaAs; DC performance; HEMTs; III-V semiconductors; VPE; atmospheric-pressure MOVPE; high transconductance; micron gate length devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870381
  • Filename
    4257712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032723