Title :
High-power low-threshold Ga0.88In0.12As0.10Sb0.90-Al 0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy
Author :
Grunberg, P. ; Baranov, Alexander ; Fouillant, C. ; Grech, P. ; Boissier, G. ; Alibert, C. ; Joullie, A.
Author_Institution :
Equipe de Microoptoelectron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier
fDate :
2/17/1994 12:00:00 AM
Abstract :
Ga0.88In0.12As0.10Sb0.90 /Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers emitting at 2.05 μm have been grown by liquid phase epitaxy on GaSb substrates. For pulsed operation of 300 μm wide broad stripe lasers, output power as high as 80 mW per facet and threshold current density as low as 1.7 kA/cm2 have been obtained for cavity lengths of 300 and 900 μm respectively. Mesa-stripe lasers 200 μm long showed room temperature threshold current of 200 mA with a characteristic temperature T0=115 K
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium antimonide; liquid phase epitaxial growth; semiconductor growth; semiconductor lasers; 2.05 mum; 200 mA; 200 mum; 300 mum; 80 mW; 900 mum; Ga0.88In0.12As0.10Sb0.90 -Al0.47Ga0.53As0.04Sb0.96 ; GaInAsSb/AlGaAsSb DH lasers; GaSb; GaSb substrates; broad stripe lasers; characteristic temperature; liquid phase epitaxy; mesa-stripe lasers; output power; pulsed operation; room temperature threshold current; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940239
