DocumentCode
1032764
Title
High-reflectance AlPSb/GaPSb distributed Bragg reflector mirrors on InP grown by gas-source molecular beam epitaxy
Author
Shimomura, H. ; Anan, T. ; Mori, Kazuo ; Sugou, S.
Author_Institution
Optoelectron. Res. Labs., NEC Corp., Tsukuba
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
314
Lastpage
315
Abstract
Large refractive-index difference, 1.55 μm distributed Bragg reflectors, using AlPSb and GaPSb lattice matched to InP, are demonstrated. This is the first report of AlPSb/GaPSb quarter-wave distributed Bragg reflectors. This mirror structure will be useful for InP-based surface-emitting laser applications at long wavelengths
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; integrated optics; laser cavity resonators; laser transitions; mirrors; molecular beam epitaxial growth; refractive index; semiconductor growth; semiconductor lasers; 1.55 micron; AlPSb-GaPSb-InP; AlPSb/GaPSb mirrors; DBR lasers; InP; distributed Bragg reflector mirrors; gas-source molecular beam epitaxy; long wavelengths; mirror structure; quarter-wave DBR; surface-emitting laser applications;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940230
Filename
267303
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