Title :
Optically transparent indium-tin-oxide (ITO) ohmic contacts in the fabrication of vertical-cavity surface-emitting lasers
Author :
Matin, Md Abdul ; Jezierski, A.F. ; Lacklison, D.E. ; Benson, T.M. ; Cheng, T.S. ; Roberts, Jeffrey S. ; Sale, T.E. ; Orton, J.W. ; Foxon, C.T. ; Rezazadeh, Ali A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nottingham Univ.
fDate :
2/17/1994 12:00:00 AM
Abstract :
The authors report what they believe to be the first successful fabrication of an InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) using optically transparent indium-tin-oxide (ITO) ohmic contacts to p- and n-type regions of the laser. Threshold current densities Jth are similar to those lasers fabricated from the same wafer using conventional ohmic contacts
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; ohmic contacts; optical workshop techniques; semiconductor lasers; semiconductor materials; sputter deposition; sputtered coatings; tin compounds; 20 mA; 963 nm; ITO ohmic contacts; InGaAs-GaAs-ITO; InGaAs-GaAs-InSnO; InGaAs/GaAs; RF sputtering; VCSEL; fabrication; n-type regions; optically transparent; p-type regions; surface-emitting lasers; threshold current densities; vertical-cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940243
