DocumentCode :
1032816
Title :
Temperature dependence of 2 μm strained-quantum-well InGaAs/InGaAsP/InP diode lasers
Author :
Martinelli, R.U. ; Menna, R.J. ; Triano, Alex ; Olsen, G.H.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ
Volume :
30
Issue :
4
fYear :
1994
fDate :
2/17/1994 12:00:00 AM
Firstpage :
324
Lastpage :
326
Abstract :
Strained multiquantum-well InGaAs lasers had CW thresholds near 50 mA at 2 μm at 312 K. Abrupt decreases in characteristic temperatures (T0) occurred at 250 K for threshold current and 273 K for external quantum efficiency, indicating a highly temperature sensitive nonradiative recombination mechanism
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 2 micron; 250 to 312 K; 50 mA; CW thresholds; InGaAs-InGaAsP-InP; InGaAs/InGaAsP/InP; MQW lasers; characteristic temperatures; diode lasers; multiquantum-well; nonradiative recombination mechanism; strained-quantum-well; temperature dependence; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940222
Filename :
267309
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1032816
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