DocumentCode :
1032961
Title :
Accuracy of Fabry-Perot method of semiconductor laser gain measurement
Author :
El Mashade, M.B. ; Arnaud, Jerome
Author_Institution :
USTL, Equipe de Microoptoélectronique de Montpellier, CNRS UA 392, Montpellier, France
Volume :
23
Issue :
11
fYear :
1987
Firstpage :
568
Lastpage :
570
Abstract :
The Fabry¿Perot (FP) method of semiconductor laser gain measurement, first proposed by Hakki and Paoli (1975), is widely used. It is based on the measurement of the FP resonances excited by spontaneous emission. Its validity rests on the assumption that a single mode is significant. We show, using a simplified laser model, that this assumption is valid only when the power mirror reflectivity is very small, or near the laser oscillating frequency. For example, the error is in the order of 20% when the power facet reflectivities are equal to 37% and the modal gain is unity. These results apply to both index-guided and gain-guided lasers.
Keywords :
gain measurement; laser cavity resonators; laser modes; laser theory; semiconductor junction lasers; FP resonances; Fabry-Perot method; facet reflectivities; gain-guided lasers; index guided lasers; laser oscillating frequency; modal gain; power mirror reflectivity; semiconductor laser gain measurement; simplified laser model; single mode; spontaneous emission;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870407
Filename :
4257739
Link To Document :
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