Title :
High-speed, self-passivated InGaAs PIN photodiode for microwave fibre links
Author :
Fan, C. ; Yu, Paul K. L. ; Chen, P.C.
Author_Institution :
University of California at San Diego, Department of Electrical & Computer Engineering, La Jolla, USA
Abstract :
High-speed, low-dark-current, front-side-illuminated InGaAs PIN photodiodes with a self-passivated-mesa structure have been fabricated on semi-insulating InP substrates. These detectors have a nearly flat frequency response beyond 22GHz. Their quantum efficiency is 65% without AR coating and the dark current is about 5nA at ¿10V.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical links; photodiodes; solid-state microwave devices; -10 V; 22 GHz; 5 nA; 65 percent; AR coating; III-V semiconductors; InGaAs PIN photodiode; InGaAs-InP; InP substrates; SHF; dark current; frequency response; front-side-illuminated; microwave fibre links; quantum efficiency; self-passivated-mesa structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870409
