DocumentCode :
1032985
Title :
Air-gap isolated microcircuits—Beam-lead devices
Author :
Rosvold, Warren C. ; Legat, Hans W. ; Holden, R.L. ; Holden, R.L.
Author_Institution :
Raytheon Company, Mountain View, Calif.
Volume :
15
Issue :
9
fYear :
1968
fDate :
9/1/1968 12:00:00 AM
Firstpage :
640
Lastpage :
644
Abstract :
The comparison of air-gap isolated integrated circuits with conventionally fabricated circuits shows the advantage of the "beam-lead concept." Utilizing the anisotropic etching properties of single crystalline silicon in the
Keywords :
Air gaps; Anisotropic magnetoresistance; Bonding; Chemical vapor deposition; Crystallization; Etching; Fabrication; Integrated circuit interconnections; Silicon; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16421
Filename :
1475323
Link To Document :
بازگشت